Non-Volatile Memory (NVM) is a fundamental class of computer memory that retains stored information even when electrical power is removed, providing the crucial capability of data persistence. This category encompasses technologies from the ubiquitous NAND Flash, which enables solid-state drives (SSDs), to more emerging innovations like Resistive Random-Access Memory (RRAM). RRAM is particularly notable for its simple metal-insulator-metal (MIM) structure, which operates by changing the resistance of a dielectric solid-state material through the applied voltage to represent binary data. This mechanism allows RRAM to offer significant advantages, including exceptionally fast switching speeds, very low power consumption, and excellent scaling potential far beyond the limits of current NAND Flash technology. Furthermore, its compatibility with standard CMOS manufacturing processes makes it a compelling candidate for everything from embedded applications to advanced computing paradigms like neuromorphic and in-memory computing, where it can help bridge the performance gap between volatile DRAM and traditional, slower storage.
